METHOD FOR MANUFACTURING AN OXIDE THIN FILM TRANSISTOR USING A DRY ETCHING PROCESS, CAPABLE OF MINIMIZE THE DEGRADATION OF A THIN CONDUCTIVE FILM

摘要

PURPOSE: A method for manufacturing an oxide thin film transistor using a dry etching process is provided to prevent the degradation of and an IGZO oxide semiconductor thin film by forming a protecting layer.;CONSTITUTION: In a method for manufacturing an oxide thin film transistor using a dry etching process is comprised of the steps: forming a first thin conductive film(203) functioned as a source and a drain electrode at an upper part of a substrate(201); forming an IGZO oxide semiconductor thin film(205) on the first thin conductive films; performing the IGZO oxide semiconductor thin film through a dry etching firstly; performing the IGZO oxide semiconductor thin film through dry etching secondly; forming an insulator film functioned as the gate insulating layer(207) on the IGZO oxide semiconductor thin film; and forming a second thin conductive film(209) functioned as the gate electrode on oxide insulator thin film.;COPYRIGHT KIPO 2010