首页> 外国专利> Manner null of the monocrystal pulling up which uses the silicon seed crystal and the said silicon seed crystal for monocrystal pulling up

Manner null of the monocrystal pulling up which uses the silicon seed crystal and the said silicon seed crystal for monocrystal pulling up

机译:使用硅籽晶和所述硅籽晶进行单晶提拉的单晶提拉方式

摘要

PROBLEM TO BE SOLVED: To obtain a heavyweight single crystal by using a silicon seed crystal with the oxygen concentration controlled within a specified range to effectively exclude introduction of dislocations in the beginning of single crystal formation and also exclude neck formation so as to prevent the single crystal being pulled-up from falling. ;SOLUTION: This seed crystal for pulling up a single crystal consists of silicon with an oxygen concentration of 12 to 18×1017/cm. In the pulling-up of signals crystal, the diameter (l) of the seed crystal 15 is set at ≥6mm; after preheating its tip 15a, the seed crystal is dipped into a silicon melt 33, melted, and a shoulder 16b is formed without necking; subsequently, the main body is formed, and the resultant single crystal is pulled-up. In the above process, the length L of the tip 15a to be dipped into the melt 33 and to be melted is at least the diameter (l) of the seed crystal 15.;COPYRIGHT: (C)1997,JPO
机译:解决的问题:通过使用氧浓度控制在指定范围内的硅籽晶来获得重量重的单晶,以有效地排除在单晶形成开始时引入位错,并且还排除颈形成以防止单晶形成晶体因掉落而被拉起。 ;解决方案:这种提拉单晶的籽晶由氧浓度为12至18×10 17 / cm的硅组成。在信号晶体的提起中,籽晶15的直径(l)被设置为6mm。在将其尖端15a预热之后,将晶种浸入硅熔体33中,熔化,并且形成没有颈缩的肩部16b;随后,形成主体,并且将所得的单晶上拉。在上述过程中,要浸入熔体33中并要熔化的尖端15a的长度L至少是籽晶15的直径(l)。版权所有:(C)1997,JPO

著录项

  • 公开/公告号JP3235450B2

    专利类型

  • 公开/公告日2001-12-04

    原文格式PDF

  • 申请/专利权人 住友金属工業株式会社;

    申请/专利号JP19960055649

  • 发明设计人 和泉 輝郎;

    申请日1996-03-13

  • 分类号C30B29/06;C30B15/36;

  • 国家 JP

  • 入库时间 2022-08-22 00:57:21

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