首页>
外国专利>
METHOD FOR EPITAXIALLY GROWING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR
METHOD FOR EPITAXIALLY GROWING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR
展开▼
机译:地生长氮化镓基复合半导体的方法和包含氮化镓基复合半导体的电子设备
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To enhance the crystallinity of a gallium nitride based compound semiconductor for use in an electronic device while improving planality of the surface.;SOLUTION: In the method for growing a gallium nitride based compound semiconductor layer epitaxially on a sapphire substrate, the epitaxial growth face of the substrate is a face set at an off angle of 5° with respect to face A. The off angle is preferably set in the range of 0.25-0.75° and the epitaxial growth face is set off in the direction of M-axis.;COPYRIGHT: (C)2002,JPO
展开▼