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METHOD FOR PRODUCING GaN-BASED SEMICONDUCTOR CRYSTAL AND GaN-BASED SEMICONDUCTOR BASIC MATERIAL
METHOD FOR PRODUCING GaN-BASED SEMICONDUCTOR CRYSTAL AND GaN-BASED SEMICONDUCTOR BASIC MATERIAL
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机译:氮化镓基半导体晶体和氮化镓基半导体基本材料的制备方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for producing a high quality GaN-based crystal, and a GaN-based semiconductor basic material in which a high quality GaN- based crystal can be grown by that method.;SOLUTION: Protrusions and recesses (or a level difference) 1a are formed on the surface of a crystal substrate 1 composed of a material different from a GaN-based semiconductor and a GaN-based crystal 2 is grown directly on the surface where protrusions and recesses are formed with no intermediary of a low temperature GaN-based buffer layer thus obtaining a GaN-based crystal layer 3. Lateral growth of the GaN-based crystal is suppressed by the protrusions and recesses (or a level difference) on the surface of the crystal substrate and the surface is planarized with no intermediary of the buffer layer.;COPYRIGHT: (C)2002,JPO
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