Polycrystalline aluminum nitride substrate for GaN-based semiconductor crystal growth and method for producing GaN-based semiconductor using the same

摘要

A polycrystalline aluminum nitride substrate effective for crystal growth of GaN is provided. A polycrystalline aluminum nitride base material as a substrate material for grain growth of a GaN-based semiconductor, containing 1 to 10% by mass of a sintering aid component, having a thermal conductivity of 150 W / m · K or more, and a substrate The surface has no recess having a maximum diameter of 200 μm.