GIANT MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT HEAD, THIN-FILM MAGNETIC MEMORY, AND THIN-FILM MAGNETIC SENSOR

摘要

PROBLEM TO BE SOLVED: To provide a giant magnetoresistive effect element, a reliable magnetoresistance effect head comprising it, a thin film magnetic memory, and a thin-film magnetic sensor, wherein the giant magnetoresistance effect element is sufficiently magnetically stabilized, and the number of processes is reduced to simplify a manufacturing process, while a variation and elecromigration at manufacturing are suppressed for higher reliability.;SOLUTION: A giant magnetoresistance effect element 2 is provided, which comprises a lamination film 2 comprising a ferromagnetic film, a nonmagnetic film, and an antiferromagnetic film. A current I is flown by upper part electrodes 14 and 15 and lower part electrodes 11 and 12 in the direction vertical to the film surface of the lamination film 2. A hard magnetic film 3 is directly connected to both outer sides in the width direction of the lamination film 2, and an insulating layer 4 is formed above or below the hard magnetic film 3. An operating between the insulating layers 4 on both sides regulates a current path between the upper part electrodes 14 and 15 or the lower part electrodes 11 and 12 and the lamination film 2. The hard magnetic film 3 has a specific resistance which is equal to or larger than that of the lamination film 2. In addition, the magnetoresistive effect head, thin-film magnetic memory, and thin film magnetic sensor comprise the giant magnetoresistance effect element 2.;COPYRIGHT: (C)2002,JPO