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METHOD FOR MEASURING CARRIER CONCENTRATION IN SEMICONDUCTOR

机译:半导体中载流子浓度的测量方法

摘要

PROBLEM TO BE SOLVED: To accurately and rapidly measure carrier concentration distribution in a semiconductor.;SOLUTION: The method for measuring carrier concentration in a semiconductor includes a pretreatment process for pretreating a sample having a semiconductor layer when measuring carrier concentration in a semiconductor layer using a canning capacitance microscope, a detection process for detecting the capacitance of a sample by bringing the tip of a probe that the scanning capacitance microscope has into contact with the surface of the sample that has been pretreated, and a process for calculating the carrier concentration of the sample based on the detected capacitance. The pretreatment process includes a process for covering each of a plurality of samples having the same surface with at least one layer of single molecular films whose film thickness or permittivity differs, each single molecular film has known film thickness or permittivity, the detection process successively brings the tip of the probe into contact with the surface of each single molecular film to detect each of the capacitance of the sample.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:准确快速地测量半导体中的载流子浓度分布;解决方案:测量半导体中的载流子浓度的方法包括预处理过程,该预处理过程用于在使用以下方法测量半导体层中的载流子浓度时对具有半导体层的样品进行预处理。罐装电容显微镜,通过使扫描电容显微镜已经接触过的探针的尖端与经过预处理的样品表面接触来检测样品电容的检测过程以及计算载流子浓度的过程根据检测到的电容采样。预处理过程包括用至少一层膜厚度或介电常数不同的单分子膜覆盖具有相同表面的多个样品中的每一个的过程,每个单分子膜具有已知的膜厚度或介电常数,检测过程相继带来探针的尖端与每个单分子膜的表面接触以检测样品的每个电容。;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002158270A

    专利类型

  • 公开/公告日2002-05-31

    原文格式PDF

  • 申请/专利权人 SHARP CORP;

    申请/专利号JP20000354215

  • 发明设计人 ONO KIMITAKA;

    申请日2000-11-21

  • 分类号H01L21/66;G01N27/22;G01R1/06;

  • 国家 JP

  • 入库时间 2022-08-22 00:54:59

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