SINGLE CRYSTAL SiC AND METHOD OF PRODUCING THE SAME AND SiC SEMI CONDUCTOR DEVICE AND SiC COMPOSITE MATERIAL

摘要

PROBLEM TO BE SOLVED: To obtain a single crystal SiC which has a low plane defect density of SiC and is capable of being produced with good productivity, and a method of producing the same, and to obtain a Sic semiconductor device and a SiC composite material.;SOLUTION: The method of producing the single crystal SiC has a process of forming a single crystal SiC layer wherein a thin single crystal SiC layer 101a is formed on the surface of a substrate 101 by heating the substrate 101 in the presence of a raw material M containing C and, if necessary, C and Si, and a process of accumulating Sic wherein SiC 101b is accumulated on the single crystal SiC layer 101a formed in the former process, by a gas phase method or a liquid phase method. In the process of forming the single crystal Sic layer, the raw material is fed in the vicinity of the surface of the substrate and a partial pressure of the raw material therein is made higher than a prescribed pressure with respect to that of each impurity-substance, thus the impurity-substance is suppressed to reach the surface of the substrate, so that the process of forming the single crystal SiC is carried out while preventing the surface of the substrate from being etched with the impurity-substance.;COPYRIGHT: (C)2002,JPO