Rapid- temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same

摘要

A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid temperature pulsing anneal (RPA) technique with a ramp rate of 30 C./second at a hold temperature of 650 C. for a holding time of 30 minutes. The RPA technique includes applying a plurality of rapid-temperature heat pulses in sequence.