Bipolar junction transistor with high ESD robustness and low load-capacitance

摘要

According to the object, the present invention provides an electrostatic discharge (ESD) circuit, coupled between a pad and a power line. The ESD protection circuit comprises a bipolar junction transistor (BJT) . The BJT comprises a collector region having a first conductivity type, formed in a substrate, in contact with a buried layer having the first conductivity type, and coupled to the pad to become the collector of the BJT, a base region having the second conductivity type, formed on the buried layer to become the base of the BJT, and an emitter having the first conductivity type, formed in the base region and coupled to the power line to become the emitter of the BJT. The emitter has a plurality of parallel first regions and a second region connecting the first regions.