Low substrate-noise electrostatic discharge protection circuits with bi-directional silicon diodes
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机译:具有双向硅二极管的低基板噪声静电放电保护电路
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摘要
An integrated circuit device that includes a plurality of electrostatic discharge clamp circuits, variously coupled to VDD, VSS and transistor, having at least one bi-directional silicon diode that includes a first silicon diode and a second silicon diode, wherein an n-type portion of the first silicon diode is coupled to a p-type portion of the second silicon diode and a p-type portion of the first silicon diode is coupled to an n-type portion of the second silicon diode, responsive to either a positive electrostatic discharge or a negative electrostatic discharge to provide electrostatic discharge protection.
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