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Level shift circuit for stepping up logic signal amplitude with improved operating speed

机译:电平移位电路,用于提高逻辑信号幅度,提高工作速度

摘要

NMOS transistors N3 and N3S are connected in series between a PMOS transistor P1 and an NMOS transistor N1S constituting a first inverter connected between a power supply potential VDD2, which satisfies VDD1VDD2, and a ground potential VSS, and likewise, NMOS transistors N4 and N4S are connected in series between a PMOS transistor P2 and an NMOS transistor N2S constituting a second inverter. The gate insulating films of the MOS transistors P1, P2, N3 and N4 are thicker than those of the transistors N1S and N4S. The gates of the NMOS transistors N3 and N4 are connected to VDD2, the gates of NMOS transistors N3S and N4S are connected to VDD1 and these transistors are constantly on.
机译:NMOS晶体管N 3 和N 3 S串联连接在PMOS晶体管P 1 和NMOS晶体管N 1 之间。 B> S构成连接在满足VDD 1 / B> VDD 2 的电源电势VDD 2 和接地电势VSS之间的第一反相器,同样,NMOS晶体管N 4 和N 4 S串联连接在PMOS晶体管P 2 和NMOS晶体管N 2 S构成第二个逆变器。 MOS晶体管P 1, P 2, N 3 和N 4 的栅极绝缘膜厚于N 1 S和N 4 S的晶体管。 NMOS晶体管N 3 和N 4 的栅极连接到VDD 2 ,NMOS晶体管N 3的栅极 B> S和N 4 S连接到VDD 1 ,并且这些晶体管一直导通。

著录项

  • 公开/公告号US2002140455A1

    专利类型

  • 公开/公告日2002-10-03

    原文格式PDF

  • 申请/专利权人 FUJITSU LIMITED;

    申请/专利号US20010988616

  • 发明设计人 SEIICHIRO YAMAGUCHI;

    申请日2001-11-20

  • 分类号H03K19/0175;

  • 国家 US

  • 入库时间 2022-08-22 00:51:31

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