首页>
外国专利>
Methods for fabricating ferroelectric memory devices using pulsed-power plasma
Methods for fabricating ferroelectric memory devices using pulsed-power plasma
展开▼
机译:使用脉冲功率等离子体制造铁电存储器件的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
There is provided a method for fabricating a ferroelectric memory device, which can prevent the deterioration of the ferroelectric characteristics from etching damage generated during etching process of the interlayer-insulating layer formed over the capacitor to form a contact hole. The present invention is characterized by etching the interlayer-insulating layer with the use of time-modulated plasma, namely pulsed-power plasma. Accordingly, the present invention can prevent the deterioration of the ferroelectric characteristics from etching, omit or reduce the later separate thermal process for recovering the etching damage and enhance the reliability of device.
展开▼