首页> 外国专利> Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the same

Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the same

机译:大型单晶铁电薄膜的制造方法,使用其制造铁电薄膜电容器的方法以及使用该方法制造铁电存储装置的方法

摘要

A method for fabricating a large single-grained ferroelectric thin film grown by selectively nucleated lateral crystallization (SNLC) using an artificial nucleation seed, a method for fabricating a ferroelectric capacitor using the same, and a method for fabricating a ferroelectric memory device using the same. The ferroelectric thin film fabrication method includes the steps of forming a first conductive layer on one side of a semiconductor substrate, by using a conductive material, forming an artificial nucleation seed in an island form adjacent a position where a ferroelectric thin film is to be formed in the upper portion of the first conductive layer, forming a ferroelectric thin film on the whole surface of the substrate including the nucleation seed, and thermally annealing the ferroelectric thin film to thereby grow the ferroelectric thin film positioned in the lateral side of the nucleation seed into a single-grained ferroelectric thin film.
机译:一种使用人工成核晶种制造通过选择性成核横向结晶(SNLC)生长的大单晶铁电薄膜的方法,使用该晶种制造铁电电容器的方法以及使用该薄膜制造铁电存储器件的方法。铁电薄膜的制造方法包括以下步骤:通过使用导电材料在半导体衬底的一侧上形成第一导电层;在将要形成铁电薄膜的位置附近以岛状形成人工成核晶种。在第一导电层的上部中,在包括成核种子的基板的整个表面上形成铁电薄膜,并且对该铁电薄膜进行热退火,从而生长位于成核种子的侧面的铁电薄膜。成单颗粒铁电薄膜。

著录项

  • 公开/公告号US6340600B1

    专利类型

  • 公开/公告日2002-01-22

    原文格式PDF

  • 申请/专利权人 SEUNG KEE JOO;

    申请/专利号US20010837268

  • 发明设计人 JANG SIK LEE;SEUNG KI JOO;

    申请日2001-04-19

  • 分类号H01L210/00;

  • 国家 US

  • 入库时间 2022-08-22 00:47:25

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