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Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the same
Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the same
A method for fabricating a large single-grained ferroelectric thin film grown by selectively nucleated lateral crystallization (SNLC) using an artificial nucleation seed, a method for fabricating a ferroelectric capacitor using the same, and a method for fabricating a ferroelectric memory device using the same. The ferroelectric thin film fabrication method includes the steps of forming a first conductive layer on one side of a semiconductor substrate, by using a conductive material, forming an artificial nucleation seed in an island form adjacent a position where a ferroelectric thin film is to be formed in the upper portion of the first conductive layer, forming a ferroelectric thin film on the whole surface of the substrate including the nucleation seed, and thermally annealing the ferroelectric thin film to thereby grow the ferroelectric thin film positioned in the lateral side of the nucleation seed into a single-grained ferroelectric thin film.
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