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A4MeSb3O12 compounds for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures
A4MeSb3O12 compounds for growth of epitaxial HTSC/perovskite oxide films for use in HTSC/perovskite oxide devices and microwave device structures
Compounds of the general formula A4MeSb3O12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.
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机译:通式A 4 Sub> MeSb 3 Sub> O 12 Sub>的化合物,其中A为钡(Ba)或锶(Sr),Me为碱已经制备了选自锂(Li),钠(Na)和钾(K)的金属离子,并将其包含在高临界温度薄膜超导体,铁电体,热电体,压电体和混合器件结构中。
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