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System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)

机译:用于减轻化学机械抛光(CMP)过程中晶片表面变形的系统和方法

摘要

The present invention relates to a system for mitigating wafer disformation. The system includes at least a first polishing pad and a second polishing pad for polishing a wafer surface. A CMP drive system selectively applys the first and second polishing pads against the wafer surface at first and second pressures, respectively. A measuring system measures a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad. A processor employs information from the measuring system to control the CMP drive system.
机译:本发明涉及用于减轻晶片变形的系统。该系统至少包括用于抛光晶片表面的第一抛光垫和第二抛光垫。 CMP驱动系统分别在第一和第二压力下将第一和第二抛光垫选择性地施加在晶片表面上。测量系统测量与由第一抛光垫抛光的晶片的第一圆周区域相关的晶片表面厚度和与由第二抛光垫抛光的晶片的第二圆周区域相关的晶片表面厚度。处理器利用来自测量系统的信息来控制CMP驱动系统。

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