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System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)
System and method for mitigating wafer surface disformation during chemical mechanical polishing (CMP)
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机译:用于减轻化学机械抛光(CMP)过程中晶片表面变形的系统和方法
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摘要
The present invention relates to a system for mitigating wafer disformation. The system includes at least a first polishing pad and a second polishing pad for polishing a wafer surface. A CMP drive system selectively applys the first and second polishing pads against the wafer surface at first and second pressures, respectively. A measuring system measures a wafer surface thickness associated with a first circumferential region of the wafer polished by the first polishing pad and a wafer surface thickness associated with a second circumferential region of the wafer polished by the second polishing pad. A processor employs information from the measuring system to control the CMP drive system.
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