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Method for forming flip chip bump and UBM for high speed copper interconnect chip using electroless plating method

机译:化学镀方法形成用于高速铜互连芯片的倒装芯片凸点和UBM的方法

摘要

A method for forming flip chip bumps or UBM for a high speed copper interconnect chip, and more particularly to a method for forming a flip chip bump or UBM of copper/nickel, copper/nickel/copper or etc. which are carried out by a subsequent process of electroless copper plating and electroless nickel plating on a copper I/O pad. According to the method, both of electroless copper and nickel plating methods are used for forming electroless copper/nickel bumps of a copper interconnect chip so that advantages of the electroless copper plating, i.e. excellent selectivity and adhering strength to the copper chip pad and an advantage of the electroless nickel plating, i.e. excellent plating rate can be achieved at the same time.
机译:形成用于高速铜互连芯片的倒装芯片凸块或UBM的方法,更具体地涉及形成铜/镍,铜/镍/铜等的倒装芯片凸块或UBM的方法。随后在铜I / O焊盘上进行化学镀铜和化学镀镍的过程。根据该方法,化学镀铜和镍镀覆方法均用于形成铜互连芯片的化学镀铜/镍凸块,从而化学镀铜的优点即优异的选择性和对铜芯片焊盘的粘附强度以及优点通过化学镀镍,可以同时获得优异的镀覆速率。

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