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Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector
Method of fabricating a planar porous silicon metal-semicoductor-metal photodetector
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机译:平面多孔硅金属-半导体-金属光电探测器的制造方法
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摘要
A high gain and low leakage current porous silicon metal-semiconductor-metal planar photodetector was fabricated through rapid thermal oxidation (RTO) and rapid thermal annealing (RTA). A high responsivity of 2.15 A/W can be obtained under a 0.85 mW 675 nm laser diode illumination. The gain is 400%. It shows high potential as a device applied in optoelectronics and optoelectronic integrated circuits.
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机译:通过快速热氧化(RTO)和快速热退火(RTA)制造了一种高增益,低漏电流的多孔硅金属-半导体-金属平面光电探测器。在0.85 mW 675 nm激光二极管照明下,可以获得2.15 A / W的高响应度。增益为400%。作为应用于光电和光电集成电路的设备,它显示出很高的潜力。
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