Short-circuit-resistant IGBT module

摘要

In an IGBT module which is made contact with by pressure and comprises a plurality of individual chips (4) connected in parallel, an additional layer (7) facilitates a stable short circuit. The layer (7), as a foil, as a paste or as a component of the solder, is brought into contact with the main electrodes (5,6) of the semiconductor chip (4). The layer (7) contains, for example, Ag and, together with the semiconductor material, forms a eutectic mixture whose melting point is below that of the two partner materials.