首页> 外国专利> Method for preventing redeposition of etching products onto substrate surfaces during a tungsten re-etching process in the production of LSI circuits

Method for preventing redeposition of etching products onto substrate surfaces during a tungsten re-etching process in the production of LSI circuits

机译:在LSI电路生产中在钨的再蚀刻过程中防止蚀刻产物再沉积在基板表面上的方法

摘要

A method for back-etching of tungsten-coated substrate surfaces in the production of large-scale integrated circuits includes pressing a substrate against a cooled specimen holder during back-etching with a retaining ring being disposed on an edge of the substrate and only locally retaining the edge of the substrate with the retaining ring at retaining locations distributed over the circumference of the retaining ring. The retaining locations are backup-free relative to etching products liberated in the back-etching, causing the etching products to flow past the retaining locations and be purposefully deposited outside the substrate surface.
机译:一种在大规模集成电路生产中对钨涂层的衬底表面进行回蚀的方法,该方法包括在回蚀期间将衬底压靠在冷却的样品支架上,同时将固定环置于衬底的边缘,并且仅局部保持在具有保持环的基板边缘上,保持环分布在保持环的圆周上。相对于在反蚀刻中释放的蚀刻产物,保持位置是无备份的,从而导致蚀刻产物流过保持位置并有目的地沉积在基板表面的外部。

著录项

  • 公开/公告号US6380094B1

    专利类型

  • 公开/公告日2002-04-30

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号US19950529322

  • 发明设计人 UWE SEIDEL;RAINER BRAUN;

    申请日1995-09-18

  • 分类号H01L210/00;

  • 国家 US

  • 入库时间 2022-08-22 00:47:41

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