Growth of GaN on Si substrate using GaSe buffer layer

摘要

As a pretreatment of a substrate, a substrate of Si having the (111) surface orientation as a main surface is soaked in hydrofluoric acid, so as to form a H atomic layer for terminating dangling bonds on the main surface of the substrate. Then, the substrate is placed in a highly evacuated growth chamber in an MBE system, and a Ga molecular beam and a Se molecular beam are supplied onto the H atomic layer on the substrate, so as to grow a buffer layer of GaSe, that is, a van der Waals crystal. Next, with the supply of the Se molecular beam stopped, a N₂ gas activated by using radio frequency or electron cyclotron resonance is supplied instead as a nitrogen source onto the buffer layer on the substrate, so as to form a semiconductor layer of GaN.