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Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions
Solid phase epitaxy process for manufacturing transistors having silicon/germanium channel regions
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机译:用于制造具有硅/锗沟道区的晶体管的固相外延工艺
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摘要
A method of manufacturing an integrated circuit utilizes solid phase epitaxy to form a channel region. The method includes providing an amorphous semiconductor material including germanium, crystallizing the amorphous semiconductor material via solid phase epitaxy, and doping to form a source location and a drain location. The semiconductor material containing germanium can increase the charge mobility associated with the transistor.
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