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Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet
Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet
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机译:通过等离子流对薄膜进行表面改性或沉积的设备,以及通过等离子流对化学物质进行腐蚀或沉积的方法
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摘要
"SURFACE MODIFICATION APPLIANCE OR DEPOSITION OF FINE FILM BY PLASMA JET, AND, CHEMICAL ATTACK METHOD OR DEPOSITION OF FINE FILM BY PLASMA JET". A new method of surface modification or thin film deposition of CVD enhanced by plasma, high speed and high quality plasma, and apparatus. The invention employs both microwave energy (5) and electronic beams (6) to create a plasma of excited species that modify the surface of substrates (2) or are deposited on the substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reaction species into the plasma. This gas jet system (3) takes into account the higher deposition speed than conventional PECVD processes, while maintaining the desired high quality of the deposited materials.
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