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Apparatus for surface modification or deposition of thin film by plasma jet, and method of chemical attack or deposition of thin film by plasma jet

机译:通过等离子流对薄膜进行表面改性或沉积的设备,以及通过等离子流对化学物质进行腐蚀或沉积的方法

摘要

"SURFACE MODIFICATION APPLIANCE OR DEPOSITION OF FINE FILM BY PLASMA JET, AND, CHEMICAL ATTACK METHOD OR DEPOSITION OF FINE FILM BY PLASMA JET". A new method of surface modification or thin film deposition of CVD enhanced by plasma, high speed and high quality plasma, and apparatus. The invention employs both microwave energy (5) and electronic beams (6) to create a plasma of excited species that modify the surface of substrates (2) or are deposited on the substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reaction species into the plasma. This gas jet system (3) takes into account the higher deposition speed than conventional PECVD processes, while maintaining the desired high quality of the deposited materials.
机译:“用等离子射流修饰细膜的表面修饰或沉积,以及用等离子射流化学腐蚀方法或细膜的沉积”。通过等离子体,高速和高质量等离子体增强的CVD表面改性或薄膜沉积的新方法以及装置。本发明利用微波能量(5)和电子束(6)两者来产生激发物质的等离子体,其改变了基底(2)的表面或沉积在基底上以形成所需的薄膜。本发明还采用气体喷射系统(3)将反应物质引入等离子体中。该气体喷射系统(3)考虑到了比常规PECVD工艺更高的沉积速度,同时保持了所需的高质量沉积材料。

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