GAS-PHASE ADDITIVES FOR AN ENHANCEMENT OF LATERAL ETCH COMPONENT DURING HIGH DENSITY PLASMA FILM DEPOSITION TO IMPROVE FILM GAP-FILL CAPABILITY

摘要

A method for fabricating a silicon oxide and silicon glass layers atlow temperature using High Density Plasma CVD with silane or inorganic ororganic silane derivatives as a source of silicon, inorganic compoundscontaining boron, phosphorus, and fluorine as a doping compounds, oxygen,and gas additives is described. RF plasma with certain plasma density ismaintained throughout the entire deposition step in reactor chamber. Keyfeature of the invention's process is a silicon source to gas additivemole ratio, which is maintained depending on the used compound anddeposition process conditions. Inorganic halide-containing compounds areused as gas additives. This feature provides the reaction conditions forthe proper reaction performance that allows a deposition of a film withgood film integrity and void-free gap-fill within the steps of devicestructures.