METHOD FOR CONTACT ETCHING USING A HARDMASK AND ADVANCED RESIST TECHNOLOGY

摘要

A method for forming contact holes, in accordance with the present invention, includes forming a hard mask layer on a dielectric layer, forming an anti-reflection coating of less than or equal to 1000 angstroms in thickness on the hard mask layer, and forming a silicon containing imaging resist layer on the anti-reflection layer. The imaging resist layer is patterned and the anti-reflection coating and the hard mask are etched by employing the imaging resist layer as a mask. The dielectric layer is then etched by employing the hard mask as a mask.