TREATING N-TYPE GaN WITH A C12-BASED INDUCTIVELY COUPLED PLASMA BEFORE FORMATION OF OHMIC CONTACTS

摘要

Forming low contract resistance metal contacts on GaN films by treating a GaN surface using a chlorine gas Inductively Coupled Plasma (ICP) etch process before the metal contacts are formed. Beneficially, the GaN is n-type and doped with Si, while the metal contacts include alternating layers of Ti and Al. Additionally, the GaN film is dipped in a solution of HC1:H2O prior to metal contact formation.