首页> 外国专利> WRITE PROHIBITION CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT CONTAINING THE SAME, INK CARTRIDGE HAVING THIS SEMICONDUCTOR INTEGRATED CIRCUIT, AND INK JET RECORDER

WRITE PROHIBITION CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT CONTAINING THE SAME, INK CARTRIDGE HAVING THIS SEMICONDUCTOR INTEGRATED CIRCUIT, AND INK JET RECORDER

机译:写禁止电路,包含相同电路的半导体集成电路,具有此半导体集成电路的墨盒以及墨水喷射记录器

摘要

In a write-inhibit circuit that uses a data-writing request signal WR as an input and that uses a write-control signal WRITE to inhibit data writing, a chip area is reduced and the operating current is reduced. In a current-mirror circuit CM, by comparing a reference current Iref and a current ID flowing across the source and drain of an N-transistor T3, the voltage of a high potential power supply VDD can be detected. In other words, the voltage value of the high potential power supply VDD is sufficiently high, the data-writing request signal WR is unchanged and output as a write-control signal. Conversely, when the voltage value of the high potential power supply VDD decreases due to some reason, a transistor T6 used for a reference-current supply and a buffer gate B2 operate so that the write-control signal is at "L" irrespective of whether the data-writing request signal WR is either at "H" or at "L". In other words, when the power-supply voltage decreases, miswriting can be prevented since writing by the data-writing request signal WR is impossible. IMAGE
机译:在使用数据写入请求信号WR作为输入并且使用写入控制信号WRITE来禁止数据写入的写禁止电路中,减小了芯片面积并且减小了工作电流。在电流镜电路CM中,通过比较参考电流Iref和流过N晶体管T3的源极和漏极的电流ID,可以检测高电位电源VDD的电压。换句话说,高电位电源VDD的电压值足够高,数据写入请求信号WR不变,并且作为写入控制信号输出。相反,当高电位电源VDD的电压值由于某种原因而降低时,用于参考电流电源的晶体管T6和缓冲门B2工作,使得写控制信号为“ L”,与是否数据写入请求信号WR为“ H”或“ L”。换句话说,当电源电压降低时,由于不可能通过数据写入请求信号WR进行写入,因此可以防止误写入。 <图像>

著录项

  • 公开/公告号EP1148515A4

    专利类型

  • 公开/公告日2002-10-30

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORPORATION;

    申请/专利号EP20000964675

  • 发明设计人 TAKAGI TETSUO;

    申请日2000-10-04

  • 分类号G11C17/00;B41J2/175;

  • 国家 EP

  • 入库时间 2022-08-22 00:34:21

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