LATERAL THIN-FILM SOI DEVICE HAVING A LATERAL DRIFT REGION AND METHOD OF MAKING SUCH A DEVICE

摘要

A lateral thin film silicon on insulator (SOI) device includes a semiconductor substrate (22), a buried insulating layer (24) on the semiconductor substrate, a second (22) located in the SOI layer (26) And a lateral transistor device having a source region 28 of a first conductivity type formed in the body region 30 of the conductive type. A lateral drift region 32 of the first conductivity type is provided near the body region to form a weakly doped drain region and the drain contact region 34 of the first conductivity type is separated from the body region by the drift region, Direction. In order to increase the breakdown voltage and / or to reduce the " on " resistance, the lateral drift region is provided with at least one portion having an inverse doping profile.