LOW CONTACT RESISTANCE AND LOW JUNCTION LEAKAGE METAL INTERCONNECT CONTACT STRUCTURE AND METHOD FOR ITS MANUFACTURE

摘要

The metal wire contact structure having low contact resistance and low junction leakage for the IC. This is the contact structure is provided with a wiring layer of insulation material on the surface of the IC semiconductor substrate. Wiring insulating material layer has a contact opening extending in the predetermined region of the semiconductor substrate (e.g., a source region, a drain region or the gate polysilicon layer). Further, the contact structure is cobalt (or nickel), a silicide interface layer of cobalt on the wall surface of the contact opening (or nickel) adhesion layers, metal adhesion layers and metal silicide interface on the surface of the predetermined area arranged in the bottom of the contact opening and a high-melting-point metal base barrier layer and a conductive plug on the layer. Manufacturing process steps for such a contact structure, first, the at least one predetermined area comprising the steps of: providing a semiconductor substrate having a (e.g., a drain region, a source region or a polysilicon gate layer), the insulating line on the surface of the semiconductor substrate material layer a comprises the step of depositing. By passing through the wiring layer of insulating material forming a contact opening to expose the predetermined area. Then, cobalt (or nickel) attached depositing a layer, a refractory depositing a metal substrate a barrier layer, and cobalt from the adhesion layer (or nickel) to react with the silicon from the exposed predetermined region, a metal silicide interface layer the form. Finally, depositing a conductive plug layer on the barrier layer and filling the contact opening.