首页> 外国专利> 2 OVERLAY REGISTRATION ERROR MEASUREMENT MADE SIMULTANEOUSLY FOR MORE THAN TWO SEMICONDUCTOR WAFER LAYERS

2 OVERLAY REGISTRATION ERROR MEASUREMENT MADE SIMULTANEOUSLY FOR MORE THAN TWO SEMICONDUCTOR WAFER LAYERS

机译:2个以上两个半导体晶圆层同时进行的重叠配准误差测量

摘要

PURPOSE: A method and an apparatus are provided to improve the technique for simultaneously measuring a registration error for overlaying semiconductor layers. CONSTITUTION: At least first, second, and third layers are formed on top of another. A first pattern is provided at a prescribed position of the first layer. A second pattern is provided at a prescribed position of the second layer and has a specific shape and a specific size and further has at least one discontinuous part formed at a predetermined position. A third pattern is provided at a prescribed position of the third layer and has a specific shape and the specific size of the second pattern, and further has at least one discontinuous part formed at its predetermined position; and the respective parts of the second and third patterns match with at least one discontinuous part of the other, when the second and third layers are registered.
机译:目的:提供一种方法和设备以改进用于同时测量覆盖半导体层的配准误差的技术。组成:至少第一,第二和第三层形成在另一个之上。在第一层的规定位置处设置第一图案。第二图案设置在第二层的预定位置处,并且具有特定形状和特定尺寸,并且还具有形成在预定位置处的至少一个不连续部分。第三图案设置在第三层的预定位置处,并且具有第二图案的特定形状和特定尺寸,并且在其预定位置处还形成有至少一个不连续部分。当第二和第三层被配准时,第二和第三图案的各个部分与另一个的至少一个不连续部分匹配。

著录项

  • 公开/公告号KR20020016586A

    专利类型

  • 公开/公告日2002-03-04

    原文格式PDF

  • 申请/专利权人 SCHLUMBERGER TECHNOLOGIES INC.;

    申请/专利号KR20010051361

  • 发明设计人 KNUTRUD PAUL C.;

    申请日2001-08-24

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 00:31:28

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