A method of manufacturing a circuit on a substrate is provided. After formation of the gate electrode, a sidewall spacer is formed on the side of the gate electrode. A source / drain extension and a source / drain region of the p-type device are implanted through the opening in the first mask. The source / drain extension and source / drain regions of the n-type device are implanted through the openings in the second mask. The source / drain extensions are implanted at low energy and at a high tilt angle relative to the normal direction of the substrate surface, so that the source / drain extensions are formed laterally below the sidewall spacers. The source / drain regions are implanted at the same or higher energy and at a higher dose than the step of implanting the source / drain extension, at a low or zero tilt angle. In one optional aspect of the invention, for the p-type device and the n-type device, the first and second masks are used to implant the well, the channel stop, and the threshold adjustment. In another optional mechanism, a third mask is used to form a buried injection layer (BILLI) process for lateral isolation.
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