Dry etching method of metal oxide / photoresist film laminate

摘要

In order to facilitate dry etching of a metal oxide using hydrogen iodide gas, the present invention provides a method for etching and easily removing photoresist without generating a non-volatile substance generated during dry etching. It is an object of the present invention to provide a solution, and as a solution, a plasma composed of a mixture of hydrogen iodide and at least one gas selected from the group consisting of fluorine gas and fluorine compound and the group consisting of nitrogen and nitrogen compound gas is used. And dry etching the exposed metal oxide without being covered with the photoresist, and then subjecting the resist to a plasma using oxygen gas, followed by a group consisting of fluorine gas and a fluorine compound and a group consisting of nitrogen and a nitrogen compound gas. At least one gas selected from oxygen gas Etching to remove the remaining resist by using a mixed gas plasma. In this case, it is characterized by specifying a specific range to be satisfied as a flow condition of the gas selected from the group consisting of fluorine gas and fluorine compound and the group consisting of nitrogen and nitrogen compound gas and hydrogen iodide or oxygen.