Fabrication method of self aligned planar buried heterostructure semiconductor laser

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor technology, and more particularly to semiconductor laser manufacturing technology, and more particularly, to a planar embedded semiconductor laser manufacturing technology of an automatic alignment structure. It is an object of the present invention to provide a method for manufacturing a planar buried semiconductor laser which can replace a mesa side dry and wet etching process, which is a key technology of reliability, with a reproducible process by simplifying process steps. A method of manufacturing a planar buried semiconductor laser of the present invention includes a first step of forming a mask nitride film pattern in which a mesa region is opened on a substrate having a (0-1 1) crystal plane; A second step of epitaxially growing a buffer layer, an active layer, and a first cladding layer which form a resonator in the mesa region using a selective crystal growth technique, wherein the resonator forms a pyramid structure having a (111) B crystal plane at a side thereof; Removing the mask nitride film pattern; And a fourth step of epitaxially growing the current blocking layer, the second cladding layer, and the ohmic contact layer after performing the third step. That is, the present invention is a technology that allows the active layer portion is automatically aligned while eliminating the etching process on the side of the active layer that causes reliability problems by using selective area growth technology, and significantly reduces the semiconductor process including regrowth, Reproducibility and reliability are improved and economical light source fabrication is possible.