REDUCTION OF IONIC MEMORY EFFECT IN FERROELECTRIC LIQUID CRYSTAL MATERIAL

摘要

Reducing the ionic memory effects of the ferroelectric liquid crystal material. Adding an ionic dopant to provide an ion having a fast response for the (a) applying an electric field to the FLC material;: the switching pulse is a method that is reducing the effect of the ferroelectric liquid crystal (FLC) ionic memory material And (b) the first pulse of subsequently opposite polarity, and the switching pulse to the switching pulse, but the first pulse is decreased to any ionic reverse electric field generated by the switching pulse, FLC material by the switching pulse this comprises followed by the switching state does not become unstable system is disclosed.