Reduction of ionic memory effect in ferroelectric liquid crystal material

摘要

Reduction of ionic memory effect in ferroelectric liquid crystal material. A method of reducing the effects of ionic memory in a ferroelectric liquid crystal (FLC) material to which a switching pulse is applied comprises the steps of: a) adding an ionic dopant to the FLC material, the ionic dopant providing ions having a fast response to an applied electric field; and b) following said switching pulse by a first pulse of opposite polarity to said switching pulse, in such a way that said first pulse reduces any ionic reversal field created by said switching pulse, but does not destabilize the state to which the FLC material is switched by said switching pulse.