High-performance poly-silicon germanium thin film transistors and manufacturing method

摘要

The present invention relates to a gate, wherein an active region comprises a poly-Si _1-x Ge _x alloy material and a channel layer of silicon, wherein the channel layer of silicon is interposed between the gate and the poly-Si _1-x Ge _x alloy material. A high performance thin film transistor having an active region, and a method of manufacturing the high performance thin film transistor.