SEMICONDUCTOR BULK ACOUSTIC RESONATOR SBAR HAVING MEANS FOR SUPPRESSING LATERAL MODE RESONANCES AND METHOD FOR FORMING THE SAME

摘要

The invention having improved performance characteristics semiconductor bulk acoustic resonator (20) relates to a (semiconductor bulk acoustic resonator SBAR). SBAR is constructed so as to suppress the horizontal propagation acoustic modes. Horizontal acoustic wave mode, in accordance with at least a portion of the peripheral electrode (26, 28) for attenuating the reflection of the electrode regions in the horizontal acoustic mode to change the adjustment, or the electrode edge of the resonator electrodes 26, 28 It is controlled by using a viscoelastic acoustic damping material such as polyimide.