METHOD AND APPARATUS TO IMPROVE THE PROPERTIES OF ION BEAM DEPOSITED FILMS IN AN ION BEAM SPUTTERING SYSTEM

摘要

The present invention relates to an ion beam sputtering system having a substrate stage for securely supporting a wafer substrate during the ion beam sputter deposition process in a chamber, an ion beam source, multi-target, and the shutter chamber. Substrate stage are created so that they have a tilt about their vertical axes, the flux from the target, the thickness uniformity of the thin film deposited on the substrate in the ion beam sputtering system to impact at right angles to the non-aqueous to the wafer substrate castle as well as physical, electrical and magnetic the properties are improved.