SPIN-VALVE TYPE MAGNETORESISTIVE THIN FILM ELEMENT AND SPIN-VALVE TYPE MAGNETORESISTIVE THIN FILM HEAD USING THE SAME

摘要

Than the film thickness of the nonmagnetic conductive layer (top) 22, Chengdu conductive layer (bottom) 21, the thickness of the non-film formed largely and the top and bottom of the free magnetic layer 20 to the asymmetric structure. As such the strength of the free magnetic layer sense current magnetic field (Is1) and the free magnetic layer sense current magnetic field (Is2) generated in the upper side of (20) occurring in the lower side of the 20 difference blossomed of the sense current field (Is1, Is2) the sense current magnetic field, which is available as a vector sum may be used to make the asymmetry (asymmetry) to 0%. To the asymmetry of 0% it is achieved by adjusting appropriately the amount of current and the sense current direction.