Glass composition used in the production of a thin film transistor matrix contains oxides of silicon, boron, aluminum, calcium, magnesium, barium, strontium, zirconium, cerium and tin

摘要

Glass composition contains (in wt.%) 57.0-60.6 SiO2, 7-12 B2O3, 11-16 Al2O3, 1-6 CaO, 0-3.5 MgO, 3.5-9.0 BaO, 0-5 SrO, 0-2.0 ZrO2, 0-3.0 CeO2, 0-2.0 SnO2, not more than 0.1 alkalis, not more than 0.04, preferably less than 0.03 OH, less than 0.25, preferably less than 0.08 As2O3, less than 0.25, preferably less than 0.08 Sb2O3. The composition has a thermal expansion coefficient of alpha 20....300 10-6/K of 3.4-4.0, preferably 3.55-3.85, a density of not more than 2.55 103 kg/m3 and a strain point of not less than 650 at 14.5 deg C. An Independent claim is also included for a process for the production of a thin substrate glass.