A process for the characterization and simulation of a chemically - mechanical polishing - process

摘要

A process for the characterization and simulation of a cmp - process, in which a substrate surface need, in particular a semiconductor wafer, on a polishing cloth and pressed in relation to the latter is rotated for a certain polishing time, comprises the steps of: dollars a a) determining a set of process parameters, in particular of contact pressure and relative speed of rotation of the substrate and the polishing cloth; dollars a b) providing and characterizing a test substrate with test patterns with different structure densities in the case of the predetermined process parameters; dollars a is c) determining a set of model parameters for the simulation of the cmp - process from the results of the characterization of the test substrate; dollars a d) determining layout parameters relating to be polished substrate; dollars a e) determining a requirement profile to the cmp - process result for the substrate to be polished and dollars a f) simulating the cmp - process for the determination of the time required to satisfy the requirement profile. Dollars a method for operating a test device for semiconductor devices.