Reaction chamber reconditioning method for CVD reactor, etching reactor, involves introducing mixture of hydrogen and nitrogen gas into chamber that reacts with photoresist layer on dummy wafer

摘要

The reaction chamber (100) is cleaned by removing high molecular weight microparticles inside a chamber. A dummy wafer having a photoresist layer is placed inside the chamber and mixture of hydrogen and nitrogen gas is introduced into chamber. The gas molecules in the gaseous mixture is allowed to react with photoresist layer on the dummy wafer.