CVD reactor for producing a silicon carbide single crystalline layer comprises a reaction chamber, a susceptor arranged in the reaction chamber, and a gas inlet with a diffuser and a homogenizing unit

摘要

CVD reactor comprises a reaction chamber (30), a susceptor (3) arranged in the reaction chamber for receiving a base body (6) to be epitaxially coated using CVD, and a gas inlet (201) with a diffuser (21) and a homogenizing unit for homogenizing the gas flow (50) from the diffuser in the direction of the susceptor.