Device for introducing gases into the chamber of an epitaxy reactor, reactor chamber including such a gas-introduction device, and use of such a chamber for producing semiconducting layers

摘要

Device for introducing gases into the chamber of an epitaxy reactor in the vapour phase, which includes at least one sample-carrier (14), this device comprising one or more gas introduction channels opening out into the reactor through orifices. The orifices are slots (1a, 1b) arranged in such a way as to allow gases to be introduced in the form of laminar flows parallel to the sample-carrier (14). In one illustrative embodiment, the device includes several independent slots, which are parallel and superimposed, arranged at a slight distance from one another in a plane perpendicular to that of the sample and of the direction of the gaseous flow. In another example, the device includes only one slot. The use of the device allows for the introduction through each slot of either a single gas, or of several gases which do not react together. Application: production of semiconducting layers by MOVPE. IMAGE