Semiconducting component has breakdown voltage between pot region, substrate lower than semiconducting element rated voltage, not higher than that of high voltage semiconducting element

摘要

The device has a semiconducting substrate, a high voltage semiconducting element in a pot region, a channel stopper region of higher impurity concentration than the pot region and a substrate region with higher impurity concentration than the substrate. The breakdown voltage between the pot region and substrate is lower than the semiconducting element rated voltage and not higher than that of the high voltage semiconducting element. The device has a semiconducting substrate (11) of first conductivity type, a pot region (12) of second conductivity type in the substrate containing a high voltage semiconducting element, a channel stopper region (13) of second conductivity type of higher impurity concentration than the pot region and a substrate region (14) of first conductivity type with higher impurity concentration than the substrate and at a distance from the channel stopper region so that breakdown voltage between the pot region and substrate is lower than the rated voltage of the semiconducting element and not higher than that of the high voltage semiconducting element.