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Short wave, a vertical cavity surface emitting laser as and al - free active region

机译:短波,垂直腔表面发射激光器以及无铝有源区

摘要

A short wavelength VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of quantum well layers of GaAsP having barrier layers of GaInP sandwiched therebetween, the quantum well and barrier layers having substantially equal and opposite lattice mismatch.
机译:一种短波长VCSEL,其包括定位在基板上的反射镜叠层,该反射镜叠层由多对相对高和低折射率层形成,第二反射镜叠层由多对相对高和低折射率层形成,有源区域夹在第一叠层和第二叠层之间,有源区由GaAsP的量子阱层形成,GaAsP的势垒层之间夹有GaInP的势垒层,量子阱和势垒层具有基本相等且相反的晶格失配。

著录项

  • 公开/公告号DE69621719T2

    专利类型

  • 公开/公告日2002-10-31

    原文格式PDF

  • 申请/专利权人 MOTOROLA INC.;

    申请/专利号DE1996621719T

  • 申请日1996-08-16

  • 分类号H01S5/10;H01S5/32;

  • 国家 DE

  • 入库时间 2022-08-22 00:25:14

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