首页> 外国专利> Electromagnetic, especially infrared, radiation detector has reading circuit connected to a support by Van Der Waals forces, i.e. by molecular adhesion, without adhesives or equivalent means

Electromagnetic, especially infrared, radiation detector has reading circuit connected to a support by Van Der Waals forces, i.e. by molecular adhesion, without adhesives or equivalent means

机译:电磁辐射探测器,特别是红外辐射探测器,其读取电路通过范德华力(即范德华力)连接到支架上,即通过分子粘合而没有粘合剂或等效手段

摘要

Electromagnetic, especially infrared, detector comprises a reading circuit (7) on support (11) and connected electrically to a detection circuit (8), optionally on a support, by indium or tin/lead alloy microspheres using 'flip-chip' technology. Reading circuit (7) is connected to its support (11) by Van Der Waals forces, i.e. by molecular adhesion, without adhesives or equivalent means. Preferred Features: The support (10) for the radiation detection unit is transparent to the radiation or absorbs it to a limited extent. The reading circuit (7) is intended for processing some of the electrical signals emitted by the detection circuit, and it is connected to a germanium, gallium arsenide or sapphire support (11), which, in turn, is connected directly or indirectly to a cold source. An Independent claim is given for a method for production of the electromagnetic, particularly infrared, radiation detector described above. The method includes connecting the back surface of the reading circuit (7) to a support (11) such that Van Der Waals forces operate at the level of the interface according to molecular adhesion technology using a thermal oxide layer on the joining surfaces. The reading circuit (7) and its substrate (11) are subjected to sealing annealing at 200-300 degrees C. The thickness of the silicon layer constitutive of the reading circuit (7) is reduced, in order to limit the inherent effects due to thermal expansion of the reading circuit (7) with respect to those of its substrate (11)
机译:电磁检测器,特别是红外线检测器,包括在支撑件(11)上的读取电路(7),并使用“倒装芯片”技术通过铟或锡/铅合金微球电连接到检测电路(8),可选地在支撑件上。读取电路(7)通过范德华力(Van Der Waals force)即没有粘接剂或等效手段通过分子粘附而连接至其支撑件(11)。优选特征:用于辐射检测单元的支撑件(10)对于辐射是透明的或在一定程度上吸收辐射。读取电路(7)用于处理检测电路发出的一些电信号,它连接到锗,砷化镓或蓝宝石载体(11),后者又直接或间接地连接到冷源。给出了一种用于制造上述电磁辐射探测器,尤其是红外辐射探测器的方法的独立权利要求。该方法包括将读取电路(7)的后表面连接到支撑件(11),使得范德华力根据分子粘附技术在接合面上使用在接合面上的热氧化物层在界面的水平上起作用。读取电路(7)及其衬底(11)在200-300℃下进行密封退火。减小读取电路(7)的构成本发明的硅层的厚度,以限制由于以下原因引起的固有影响:读取电路(7)相对于其基板(11)的热膨胀

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