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The method of producing the electronic device which includes the inert gas annealing in order to produce the stratified super lattice material and method and the stratified super lattice material which use low temperature pretreatment

机译:包括惰性气体退火以制造分层的超晶格材料的电子器件的制造方法以及使用低温预处理的方法和分层的超晶格材料

摘要

(57) Abstract Coating of the liquid precusor in order to form the stratified super lattice material is granted to the baseplate. The above-mentioned baseplate is dried, after that, is prepared with the 450C making use of RTP 5 minutes. Following to RTP, in the inert gas annealing it does the above-mentioned baseplate at temperature below the 800C. After that, the above-mentioned baseplate 1 hour in oxygen annealing is done at temperature below the 800C. This way, the stratified super lattice material thin film (124 and 422) it forms. Annealing in the inert gas may go before the annealing in the gas which includes oxygen and, it is possible to go after the annealing in the gas which includes oxygen.
机译:(57)<摘要>为形成分层的超晶格材料,对液体前驱体进行了涂层。将上述基板干燥后,利用RTP在450℃下制备5分钟。在RTP之后,在惰性气体退火中,在低于800℃的温度下进行上述基板。之后,在低于800℃的温度下进行氧气退火的上述基板1小时。这样,形成分层的超晶格材料薄膜(124和422)。惰性气体中的退火可以在含氧气体中进行退火之前进行,并且可以在含氧气体中进行退火之后进行。

著录项

  • 公开/公告号JP2003524298A

    专利类型

  • 公开/公告日2003-08-12

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP20010555122

  • 发明设计人 那須 徹;有田 浩二;

    申请日2001-01-24

  • 分类号H01L21/316;H01L27/105;

  • 国家 JP

  • 入库时间 2022-08-22 00:23:00

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