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The method of producing the electronic device which includes the inert gas annealing in order to produce the stratified super lattice material and method and the stratified super lattice material which use low temperature pretreatment
The method of producing the electronic device which includes the inert gas annealing in order to produce the stratified super lattice material and method and the stratified super lattice material which use low temperature pretreatment
(57) Abstract Coating of the liquid precusor in order to form the stratified super lattice material is granted to the baseplate. The above-mentioned baseplate is dried, after that, is prepared with the 450C making use of RTP 5 minutes. Following to RTP, in the inert gas annealing it does the above-mentioned baseplate at temperature below the 800C. After that, the above-mentioned baseplate 1 hour in oxygen annealing is done at temperature below the 800C. This way, the stratified super lattice material thin film (124 and 422) it forms. Annealing in the inert gas may go before the annealing in the gas which includes oxygen and, it is possible to go after the annealing in the gas which includes oxygen.
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