With inputting pattern indirect ion implantation manner null of the superconducting device and the superconducting film which were formed

摘要

PROBLEM TO BE SOLVED: To provide a process for forming a pattern with a superconducting film by ion implantation at a high manufacture yield.;SOLUTION: An oxide superconducting layer 10 is formed on a substrate 12, over which a passivation layer 14 is deposited. After desired patterning is made using a mask, etc., impurity ions are implanted (18) to the oxide superconducting layer 10 through the passivation layer 14, for causing reaction with the oxygen at an implantation part. Thus, the superconductivity characteristics are suppressed and changed into insulating characteristics, and non-implanted part is completed as a superconducting pattern. The passivation layer 14 has less damages by the ion implantation with respect to the oxide superconducting layer 10, and is of a dielectric material which is appropriate in crystal structure. A device using a multiple layers of an oxide superconducting material over it can be manufactured.;COPYRIGHT: (C)2000,JPO