Detection manner and film thickness measurement manner, detection device, film thickness measuring device, and grinding device

摘要

PROBLEM TO BE SOLVED: To accurately detect a membrane thickness or a process finish point without depending on a device pattern, even at the certain portion of the pattern by selectively detecting only the O-th order light of signal light in the polishing process of a semiconductor element. ;SOLUTION: In a removal process for an insulating layer or a metal layer on the surface of a semiconductor element, only the O-th order light (positive reflected component) of the signal light (reflected light) obtained when probe light is radiated to the polished face of a wafer 4 is selectively detected, and a process finish point is detected. The light from a light source 5 is irradiated to the surface of the measured wafer 4 via a lens 6a, a control slit 17, a beam splitter 7 and a lens 6c. The reflected light is deflected by the beam splitter 7, is reflected on a mirror 8, and is condensed on a slit 10 having an opening for selecting only the O-th light by a lens 6e. Noise components such as scattered light and diffracted light are removed. The O-th order light is projected to a diffraction gratin 18 via a lens 6f, is diffracted spectrally and is fed to a linear sensor 19, then spectral intensity is measured.;COPYRIGHT: (C)2000,JPO